VSD018N08MS

Features  N-Channel，5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSD018N08MS 80V/53A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10V R @DS(on),TYP VGS=4.5 V ID 80 V 13 mΩ 15 mΩ 53 A TO-252 Part ID VSD018N08MS Package Type TO-252 Marking 018N08M Tape and reel information 2500pcs/Reel Maximum ratings, at T j=25°C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TC =100°C TC =25°C PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics TC =25°C Symbol R JC R JA Parameter Thermal Resistance-Junction to Case Thermal Resistance Junction-Amb...