N-Channel Advanced Power MOSFET
Features
N-Channel,3.3V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=3.3V Fast Swit...
Description
Features
N-Channel,3.3V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=3.3V Fast Switching 100% Avalanche Tested Pb-free lead plating; RoHS compliant
VSB004N03LS
30V/65A N-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=5V R @DS(on),TYP VGS=3.3V ID
30 V 4.5 mΩ 5.2 mΩ 65 A
TDFN3.3x3.3 .
Part ID VSB004N03LS
Package Type TDFN3.3x3.3
Marking 004N03L
Tape and reel information
5000pcs/Reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM Pulse drain current tested ①
EAS
Avalanche energy, single pulsed ②
PD Maximum power dissipation
VGS Gate-Source voltage
TSTG TJ
Storage and operating temperature range
Thermal Characteristics
TC =25°C TC =25°C TA =100°C TC =25°C
ID=15A TA =25°C
Symbol R JC R JA
Parameter
Thermal Resistance-Junction to Case Thermal Res...
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