N-Channel Advanced Power MOSFET
Features
N-Channel,10V Logic Level Control Enhancement mode Very low on-resistance Fast Switching 100% Avalanc...
Description
Features
N-Channel,10V Logic Level Control Enhancement mode Very low on-resistance Fast Switching 100% Avalanche Tested Pb-free lead plating; RoHS compliant
VSI003N06HS
60V/140A N-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=10V ID
60 V 4.0 mΩ 140 A
TO-251-L
Part ID VSI003N06HS
Package Type TO-251-L
Marking 003N06H
Tape and reel information 75pcs/Tube
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM Pulse drain current tested ① IAS Avalanche current
TC =25°C TC =25°C TC =100°C TC =25°C
L=0.5mH
EAS
Avalanche energy, single pulsed ②
PD Maximum power dissipation
VGS Gate-Source voltage
TSTG TJ
Storage and operating temperature range
Thermal Characteristics
TC =25°C
Symbol R JC R JA
Parameter
Thermal Resistance-Junction to Case Thermal Resistance Junction-Ambient
Rating
60...
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