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VSI003N06HS

Vanguard Semiconductor

N-Channel Advanced Power MOSFET

Features  N-Channel,10V Logic Level Control  Enhancement mode  Very low on-resistance  Fast Switching  100% Avalanc...


Vanguard Semiconductor

VSI003N06HS

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Description
Features  N-Channel,10V Logic Level Control  Enhancement mode  Very low on-resistance  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSI003N06HS 60V/140A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10V ID 60 V 4.0 mΩ 140 A TO-251-L Part ID VSI003N06HS Package Type TO-251-L Marking 003N06H Tape and reel information 75pcs/Tube Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① IAS Avalanche current TC =25°C TC =25°C TC =100°C TC =25°C L=0.5mH EAS Avalanche energy, single pulsed ② PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics TC =25°C Symbol R JC R JA Parameter Thermal Resistance-Junction to Case Thermal Resistance Junction-Ambient Rating 60...




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