N-Channel Advanced Power MOSFET
Features
N-Channel,5V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switc...
Description
Features
N-Channel,5V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching High conversion efficiency Pb-free lead plating; RoHS compliant
VSR050N06MS
60V/6A N-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID
60 V 30 mΩ 38 mΩ 6A
SOT89
Part ID VSR050N06MS
Package Type SOT89
Marking 050N06
Tape and reel information 3000pcs/reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM Pulse drain current tested ① PD Maximum power dissipation VGS Gate-Source voltage
TC =25°C TC =25°C TC =100°C TC =25°C TC =25°C
TSTG Storage temperature range TJ Maximum Junction Temperature
Thermal Characteristics
Symbol R JC R JA
Parameter
Thermal Resistance-Junction to Case Thermal Resistance Junction-Ambient
Rating
60 6 6 3.6 24 1.2...
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