Dual N-Channel Advanced Power MOSFET
Features
Dual N-Channel,5V Logic Level Control Enhancement mode Low on-resistance RDS(on) @ VGS=4.5 V Fast Switc...
Description
Features
Dual N-Channel,5V Logic Level Control Enhancement mode Low on-resistance RDS(on) @ VGS=4.5 V Fast Switching 100% Avalanche Tested Pb-free lead plating; RoHS compliant
VSP018N03MD
30V/30A Dual N-Channel Advanced Power MOSFET
V DS R DS(on),Typ @ VGS=10 V R DS(on),Typ @ VGS=4.5 V ID
30 V 17 mΩ 23 mΩ 30 A
PDFN5x6
Part ID
Package Type
VSP018N03MD
PDFN5x6
Marking 018N03MD
Tape and reel information
3000pcs/reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS Drain-Source breakdown voltage
ID Continuous drain current@VGS=10V
IDM Pulse drain current tested ① IAS Avalanche current max
TC =25°C TC =100°C TC =25°C L=0.5mH
EAS
PD
VGS TSTG
Avalanche energy, single pulsed ② Maximum power dissipation Gate-Source voltage Storage and operating temperature range
TC =25°C
Thermal characteristics
Symbol R JA
R JC
Parameter
Thermal Resistance Junction-Ambient
Thermal Resistance-Junction to Case
Ra...
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