VSA007N02ED

Features  N-Channel，3.3V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=3.3V  ESD Protection  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSA007N02ED 20V/12A N-Channel Advanced Power MOSFET V DS 20 V R @DS(on),TYP VGS=5.0V R @DS(on),TYP VGS=3.3V 6.5 mΩ 7.0 mΩ I D 12 A TDFN2x3-6L Part ID VSA007N02ED Package Type TDFN2x3-6L Marking 007N02ED Tape and reel information 3000pcs/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current IDM Pulse drain current tested ① EAS Avalanche energy, single pulsed ② PD Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics TC =25°C TC =25°C TA =100°C TC =25°C L=0.5mH TA =25°C Symbol Parameter RJC Thermal Resistance-Junction to Case RJA Thermal Resistanc...