VSD018N03MS

Features  N-Channel  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  100% Avalanche Tested  Pb-free lead plating; RoHS compliant VSD018N03MS 30V/30A N-Channel Advanced Power MOSFET V DS R DS(on),Typ @ VGS=10 V R DS(on),Typ @ VGS=4.5 V ID 30 V 16 mΩ 22 mΩ 30 A TO-252 Part ID Package Type VSD018N03MS TO-252 Marking 018N03M Tape and reel information 2500pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage ID Continuous drain current@VGS=10V IDM EAS PD VGS Pulse drain current tested ① Avalanche energy, single pulsed ② Maximum power dissipation Gate-Source voltage TC =25°C TC =100°C TC =25°C L=0.1mH TC =25°C TSTG Storage and operating temperature range Thermal characteristics Symbol R JA R JC Parameter Thermal Resistance Junction-Ambient Thermal Resistance-Junction to Case Rating 30 30 19 100 11 42 ±20 -55 to 175 Typical 55 3.5 Unit V A...