BC327

BC327 — PNP Epitaxial Silicon Transistor October 2014 BC327 PNP Epitaxial Silicon Transistor Features Switching and Amplifier Applications Suitable for AF-Driver Stages and Low-Power Output Stages Complement to BC337 / BC338 1 TO-92 1. Collector 2. Base 3. Emitter Ordering Information Part Number BC327BU BC32716BU BC32716TA BC32725BU BC32725TA BC32740BU BC32740TA Top Mark BC327 BC32716 BC32716 BC32725 BC32725 BC32740 BC32740 Package TO-92 3L TO-92 3L TO-92 3L TO-92 3L TO-92 3L TO-92 3L TO-92 3L Packing Method Bulk Bulk Ammo Bulk Ammo Bulk Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCES VCEO VEBO IC TJ TSTG Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Junction Temperature Storage Temperature -50 -45 -5 -800 150 -55 to 150 V V V mA °C °C © 2002 Fairchild Semiconductor Corporation BC327 Rev. 1.1.0 www.fairchildsemi.com BC327 — PNP Epitaxial Silicon Transistor Thermal Characteristics(1) Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value...