N-Channel Advanced Power MOSFET
Features
N-Channel Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching 100% Avalanche T...
Description
Features
N-Channel Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching 100% Avalanche Tested Pb-free lead plating; RoHS compliant
VSI012N03MS
30V/60A N-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5V ID
30 V 9 mΩ 12 mΩ 60 A
TO-251
Part ID VSI012N03MS
Package Type TO-251
Marking 012N03M
Tape and reel information 75pcs/Tube
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM EAS
Pulse drain current tested ① Avalanche energy, single pulsed ②
TC =25°C TC =25°C TC =100°C TC =25°C
IAS Avalanche current max
PD Maximum power dissipation
VGS Gate-Source voltage
TSTG TJ
Storage and operating temperature range
Thermal Characteristics
TC =25°C
Symbol R JC R JA
Parameter
Thermal Resistance-Junction to Case Thermal Resistance Junction-Ambie...
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