N-Channel Advanced Power MOSFET
Features
N-Channel Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching 100% Avalanche t...
Description
Features
N-Channel Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching 100% Avalanche test Pb-free lead plating; RoHS compliant
VSP013N10MS
100V/52A N-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID
100 V 11 mΩ 12 mΩ 52 A
PDFN5x6
Part ID VSP013N10MS
Package Type PDFN5x6
Marking 013N10M
Tape and reel information
3000PCS/Reel
Maximum ratings, at T j=25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM EAS
Pulse drain current tested ① Avalanche energy, single pulsed ②
TC =25°C TC =25°C TA =100°C TC =25°C
ID=18A
IAS Avalanche energy, single pulsed ②
PD Maximum power dissipation
VGS Gate-Source voltage
TSTG TJ
Storage and operating temperature range
Thermal Characteristics
TA =25°C
Symbol R JC R JA
Parameter
Thermal Resistance-Junction to Case Therma...
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