VSL100N10MS

Features  N-Channel  Enhancement mode  Very low on-resistance @ VGS=4.5 V  Fast Switching  Pb-free lead plating; RoHS compliant VSL100N10MS 100V/3A N-Channel Advanced Power MOSFET V DS 100 V R DS(on),typ@VGS=10V 78 mΩ R DS(on),typ@VGS=4.5V 85 mΩ ID 3 A SOT23-3L Part ID Package Type VSL100N10MS SOT23-3L Marking 1H05 Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① PD Maximum power dissipation IS Diode Continuous Forward Current TJ Maximum Junction Temperature TSTG Storage temperature range TC =25°C TA =100°C TC =25°C TC =25°C TC =25°C Thermal characteristics RJA Thermal Resistance Junction-Ambient RJC Thermal Resistance-Junction to Case Rating 100 ±16 3 1.9 12 1.25 3 150 -55 to 175 100 43 Unit V V A A A W A °C °C °C/W °C/W Copyr...