VSL080N06MS

Features  N-Channel  Enhancement mode  Very low on-resistance  Fast Switching  High Effective  Pb-free lead plating; RoHS compliant VSL080N06MS 60V/3A N-Channel Advanced Power MOSFET V DS R DS(on),typ@VGS=10V ID 60 70 3 SOT23-3L V mΩ A Part ID Package Type VSL080N06MS SOT23-3L Marking 003C Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① PD Maximum power dissipation IS Diode Continuous Forward Current TJ Maximum Junction Temperature TSTG Storage and operating temperature range TC =25°C TA =100°C TC =25°C TC =25°C TC =25°C Thermal characteristics RJA Thermal Resistance Junction-Ambient Rating 60 ±16 3 1.9 12 1.5 3 150 -55 to 175 80 Unit V V A A A W A °C °C °C/W Copyright Vanguard Semiconductor Co., Ltd Rev. A– Oct.20th, 2015 Page...