VS3019AD

Features Ron(typ.)=25 mΩ @VGS=10V Ron(typ.)=35 mΩ @VGS=4.5V Low On-Resistance 150°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant VS3019AD 30V/19A N-Channel Advanced Power MOSFET Description VS3019AD designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable device for variety of DC-DC applications. TO-252 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ TSTG Drain-Source Breakdown Voltage Maximum Junction Temperature Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDM Pulse Drain Current Tested TC =25°C TC =25°C ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation TC =25°C TC =70°C TC =25°C RJA Thermal Resistance Junction-Ambient ...