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VS3400BC Dataheets PDF



Part Number VS3400BC
Manufacturers Vanguard Semiconductor
Logo Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Datasheet VS3400BC DatasheetVS3400BC Datasheet (PDF)

Features Ron(typ.)=30 mΩ @VGS=4.5V Low On-Resistance 150°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant VS3400BC 30V/5.8A N-Channel Advanced Power MOSFET Description VS3400BC designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable device for variety of DC-DC applications. Absolute Maximum Ratings Stresses .

  VS3400BC   VS3400BC



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Features Ron(typ.)=30 mΩ @VGS=4.5V Low On-Resistance 150°C Operating Temperature Fast Switching Lead-Free, RoHS Compliant VS3400BC 30V/5.8A N-Channel Advanced Power MOSFET Description VS3400BC designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable device for variety of DC-DC applications. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperat.


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