N-Channel Advanced Power MOSFET
Features
N-Channel Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching High conversion ...
Description
Features
N-Channel Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching High conversion efficiency Pb-free lead plating; RoHS compliant
VSD013N08MS
80V/66A N-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5V ID
80 V 10 mΩ 12 mΩ 66 A
TO-252
Part ID VSD013N08MS
Package Type TO-252
Marking 013N08MS
Tape and reel information 2500pcs/reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM Pulse drain current tested ①
EAS
Avalanche energy, single pulsed ②
PD Maximum power dissipation
VGS Gate-Source voltage
TSTG TJ
Storage and operating temperature range
Thermal Characteristics
TC =25°C TC =25°C TA =70°C TC =25°C
ID=16A TA =25°C
Symbol R JC R JA
Parameter
Thermal Resistance-Junction to Case Thermal Resistance Junction-Ambient
Rating
8...
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