Amplifier Transistors. BC327-25 Datasheet


BC327-25 Transistors. Datasheet pdf. Equivalent


Part Number

BC327-25

Description

Amplifier Transistors

Manufacture

ON Semiconductor

Total Page 5 Pages
Datasheet
Download BC327-25 Datasheet


BC327-25
BC327, BC327-16,
BC327-25, BC327-40
Amplifier Transistors
PNP Silicon
Features
These are PbFree Devices*
MAXIMUM RATINGS
Rating
Collector Emitter Voltage
Collector Emitter Voltage
EmitterBase Voltage
Collector Current Continuous
Total Power Dissipation @ TA = 25°C
Derate above TA = 25°C
Symbol
VCEO
VCES
VEBO
IC
PD
Value
45
50
5.0
800
625
5.0
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Total Power Dissipation @ TA = 25°C
Derate above TA = 25°C
Operating and Storage Junction
Temperature Range
PD
TJ, Tstg
1.5
12
55 to +150
W
mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient RqJA
200 °C/W
Thermal Resistance, JunctiontoCase
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
COLLECTOR
1
2
BASE
3
EMITTER
TO92
CASE 29
STYLE 17
123
STRAIGHT LEAD
BULK PACK
12 3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
BC
xxx
AYWW G
G
BCxxx = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 4 of this data sheet.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2011
September, 2011 Rev. 6
1
Publication Order Number:
BC327/D

BC327-25
BC327, BC32716, BC32725, BC32740
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
V(BR)CEO
45
Vdc
Collector Emitter Breakdown Voltage
(IC = 100 mA, IE = 0)
V(BR)CES
50
Vdc
Emitter Base Breakdown Voltage
(IE = 10 mA, IC = 0)
V(BR)EBO
5.0
Vdc
Collector Cutoff Current
(VCB = 30 V, IE = 0)
ICBO
nAdc
− − −100
Collector Cutoff Current
(VCE = 45 V, VBE = 0)
ICES
nAdc
− − −100
Emitter Cutoff Current
(VEB = 4.0 V, IC = 0)
IEBO
100
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
(IC = 300 mA, VCE = 1.0 V)
BC327
BC32716
BC32725
BC32740
hFE
100 630
100 250
160 400
250 630
40
BaseEmitter On Voltage
(IC = 300 mA, VCE = 1.0 V)
VBE(on) − − −1.2 Vdc
Collector Emitter Saturation Voltage
(IC = 500 mA, IB = 50 mA)
VCE(sat)
− −0.7 Vdc
SMALLSIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
Cob
11
pF
Current Gain Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
fT 260 MHz
1.0
0.7 D = 0.5
0.5
0.3 0.2
0.2 0.1
0.1 0.05
0.07 0.02
0.05
0.03 0.01
0.02
SINGLE PULSE
SINGLE PULSE
0.01
0.001 0.002
0.005 0.01 0.02
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.05 0.1 0.2
0.5 1.0 2.0
t, TIME (SECONDS)
Figure 1. Thermal Response
qJC(t) = (t) qJC
qJC = 100°C/W MAX
qJA(t) = r(t) qJA
qJA = 375°C/W MAX
D CURVES APPLY FOR
POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) qJC(t)
5.0 10 20
50
100
http://onsemi.com
2


Features BC327, BC327-16, BC327-25, BC327-40 Ampl ifier Transistors PNP Silicon Features • These are Pb−Free Devices* MAXIM UM RATINGS Rating Collector −Emitter Voltage Collector −Emitter Voltage E mitter−Base Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Symbol VCEO VCES VEBO IC PD Value −4 5 −50 −5.0 −800 625 5.0 Unit Vdc Vdc Vdc mAdc mW mW/°C Total Power Di ssipation @ TA = 25°C Derate above TA = 25°C Operating and Storage Junction Temperature Range PD TJ, Tstg 1.5 12 −55 to +150 W mW/°C °C THERMAL CH ARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction −to−Ambient RqJA 200 °C/W Therma l Resistance, Junction−to−Case RqJ C 83.3 °C/W Stresses exceeding Maxim um Ratings may damage the device. Maxim um Ratings are stress ratings only. Fun ctional operation above the Recommended Operating Conditions is not implied. E xtended exposure to stresses above the Recommended Operating Co.
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