BC328-16

PNP Silicon AF Transistors q High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 337, BC 338 (NPN) BC 327 BC 328 2 3 1 Type BC 327 BC 327-16 BC 327-25 BC 327-40 BC 328 BC 328-16 BC 328-25 BC 328-40 Marking – Ordering Code Q62702-C311 Q62702-C311-V3 Q62702-C311-V4 Q62702-C311-V2 Q62702-C312 Q62702-C312-V3 Q62702-C312-V4 Q62702-C312-V2 Pin Configuration 123 CBE Package1) TO-92 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 5.91 BC 327 BC 328 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case1) Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values BC 327 BC 328 45 25 50 30 5 800 1 100 200 625 150 – 65 … + 150 Unit V mA A mA mW ˚C Rth JA Rth JC ≤ 200 ≤ 135 K/W 1) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 2 BC 327 BC 328 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC characteristics Collector-emitter breakdown voltage V(BR)CE0 V IC = 10 mA BC 327 45 – – BC 328 25 – – Collector-base breakdown voltage IC = 100 µA BC 327 BC 328 V(BR)CB0 50 30 – – – – Emitter-base breakdown voltage IE = 10 µA V...