BC328-25

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC327/D Amplifier Transistors PNP Silicon COLLECTOR 1 BC327,-16,-25 BC328,-16,-25 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC327 BC328 Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO VCBO VEBO IC PD –45 –25 –50 –30 –5.0 –800 625 5.0 Vdc Vdc Vdc mAdc mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 Watt 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –10 mA, IB = 0) BC327 BC328 V(BR)CEO Collector – Emitter Breakdown Voltage (IC = –100 µA, IE = 0) BC327 BC328 V(BR)CES Emitter – Base Breakdown Voltage (IE = –10 mA, IC = 0) Collector Cutoff Current (VCB = –30 V, IE = 0) (VCB = –20 V, IE = 0) Collector Cutoff Current (VCE = –45 V, VBE = 0) (VCE = –25 V, VBE = 0) Emitter Cutoff Current (VEB = –4.0 V, IC = 0) BC327 BC328 BC327 BC328 V(BR)EBO ICBO ICES IEBO Min –45 –25 –50 –30 –5.0 — — — — — 1 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) Typ Max Unit Vdc —— —— Vdc —— —— — — Vdc nAdc — –100 — –...