MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC337/D
Amplifier Transistors
NPN Silicon
COLLECTOR 1
B...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC337/D
Amplifier
Transistors
NPN Silicon
COLLECTOR 1
BC337,-16,-25,-40 BC338,-16,-25,-40
2 BASE
3 EMITTER
MAXIMUM RATINGS
Rating
Symbol BC337 BC338 Unit
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C Derate above 25°C
VCEO VCBO VEBO
IC PD
45 25 50 30
5.0 800 625 5.0
Vdc Vdc Vdc mAdc mW mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
1.5 Watt 12 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient RqJA
200 °C/W
Thermal Resistance, Junction to Case
RqJC
83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (IC = 10 mA, IB = 0)
BC337 BC338
V(BR)CEO
Collector – Emitter Breakdown Voltage (IC = 100 µA, IE = 0)
BC337 BC338
V(BR)CES
Emitter – Base Breakdown Voltage (IE = 10 mA, IC = 0)
Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 20 V, IE = 0)
Collector Cutoff Current (VCE = 45 V, VBE = 0) (VCE = 25 V, VBE = 0)
Emitter Cutoff Current (VEB = 4.0 V, IC = 0)
BC337 BC338
BC337 BC338
V(BR)EBO ICBO ICES IEBO
Min
45 25
50 30 5.0
— —
— — —
1 2 3
CASE 29–04, STYLE 17 TO–92 (TO–226AA)
Typ Max Unit
Vdc —— ——
Vdc —— —— — — Vdc
nAdc — 100 — 100
nAdc — 100 —...