BC337, BC337-25, BC337-40
Amplifier Transistors
NPN Silicon
Features
• These are Pb−Free Devices
MAXIMUM RATINGS
Ratin...
BC337, BC337-25, BC337-40
Amplifier
Transistors
NPN Silicon
Features
These are Pb−Free Devices
MAXIMUM RATINGS
Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C
Symbol VCEO VCBO VEBO
IC PD
Value 45 50 5.0 800 625 5.0
Unit Vdc Vdc Vdc mAdc mW mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C
PD
1.5 W 12 mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3 °C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
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COLLECTOR 1
2 BASE
3 EMITTER
TO−92 CASE 29 STYLE 17
123 STRAIGHT LEAD
BULK PACK
12 3
BENT LEAD TAPE & REEL AMMO PACK
MARKING DIAGRAM
BC33 7−xx AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
November, 2013 − Rev. 8
1
BC337−xx = Device Code (Refer to page 4)
A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)
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