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BC338 Dataheets PDF



Part Number BC338
Manufacturers Diotec Semiconductor
Logo Diotec Semiconductor
Description Si-Epitaxial PlanarTransistors
Datasheet BC338 DatasheetBC338 Datasheet (PDF)

BC337 / BC338 BC337 / BC338 NPN General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz Version 2006-05-30 Power dissipation Verlustleistung CBE Plastic case Kunststoffgehäuse 16 9 18 Weight approx. – Gewicht ca. 2 x 2.54 Dimensions - Maße [mm] Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack NPN 625 mW TO-92 (10D3) 0.18 g.

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BC337 / BC338 BC337 / BC338 NPN General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz Version 2006-05-30 Power dissipation Verlustleistung CBE Plastic case Kunststoffgehäuse 16 9 18 Weight approx. – Gewicht ca. 2 x 2.54 Dimensions - Maße [mm] Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack NPN 625 mW TO-92 (10D3) 0.18 g Maximum ratings (TA = 25°C) Collector-Emitter-volt. – Kollektor-Emitter-Spannung Collector-Emitter-volt. – Kollektor-Emitter-Spannung Emitter-Base-voltage – Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Peak Collector current – Kollektor-Spitzenstrom Base current – Basisstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur E-B short B open C open VCES VCEO VEBO Ptot IC ICM IB Tj TS Grenzwerte (TA = 25°C) BC337 BC338 50 V 30 V 45 V 25 V 5V 625 mW 1) 800 mA 1A 100 mA -55...+150°C -55…+150°C Characteristics (Tj = 25°C) DC current gain – Kollektor-Basis-Stromverhältnis 2) VCE = 1 V, IC = 100 mA Group -16 Group -25 Group -40 hFE hFE hFE VCE = 1 V, IC = 300 mA Group -16 Group -25 Group -40 hFE hFE hFE Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2) IC = 500 mA, IB = 50 mA VCEsat Kennwerte (Tj = 25°C) Min. Typ. Max. 100 160 250 160 250 400 250 400 630 60 130 100 200 170 320 – – – – – 0.7 V 1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 Characteristics (Tj = 25°C) Base-Emitter-voltage – Basis-Emitter-Spannung 2) VCE = 1 V, IC = 300 mA, Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom VCE = 45 V, (B-E short) VCE = 25 V, (B-E short) BC337 BC338 VCE = 45 V, Tj = 125°C, (B-E short) VCE = 25 V, Tj = 125°C, (B-E short) BC337 BC338 Gain-Bandwidth Product – Transitfrequenz VCE = 5 V, IC = 10 mA, f = 50 MHz Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 10 V, IE =ie = 0, f = 1 MHz Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft Recommended complementary PNP transistors Empfohlene komplementäre PNP-Transistoren Available current gain groups per type Lieferbare Stromverstärkungsgruppen pro Typ VBE ICES ICES ICES ICES fT CCBO RthA BC337 / BC338 Kennwerte (Tj = 25°C) Min. Typ. Max. – – 1.2 V – 2 nA 100 nA – 2 nA 100 nA – – 10 µA – – 10 µA – 100 MHz – – 12 pF – < 200 K/W 1) BC327 / BC328 BC337-16 BC337-25 BC337-40 BC338-16 BC338-25 BC338-40 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [°C] Power dissipation versus ambient temperature 1) Verlustleistung in Abh. von d. Umgebungstemp.1) 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% 1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden 2 http://www.diotec.com/ © Diotec Semiconductor AG .


BC338 BC338 BC338-25


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