NPN Silicon AF Transistor
q High current gain q High collector current q Low collector-emitter saturation voltage q Comp...
NPN Silicon AF
Transistor
q High current gain q High collector current q Low collector-emitter saturation voltage q Complementary type: BC 369 (
PNP)
BC 368
2 3
1
Type BC 368
Marking –
Ordering Code C62702-C747
Pin Configuration 123
ECB
Package1) TO-92
Maximum Ratings
Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 90 ˚C2) Junction temperature Storage temperature range
Thermal Resistance
Junction - ambient2) Junction - case3)
Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg
Values
Unit
20 V
25
5
1A
2
100 mA
200
0.8 (1)
W
150 ˚C
– 65 … + 150
Rth JA Rth JC
≤ 156 ≤ 75
K/W
1) For detailed information see chapter Package Outlines. 2) If
transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area for
the collector terminal, RthJA = 125 K/W and thus Ptot max = 1 W at TA = 25 ˚C. 3) M...
