BC369

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors COLLECTOR 2 3 BASE NPN 1 EMITTER 3 BASE PNP 1 EMITTER COLLECTOR 2 Order this document by BC368/D NPN BC368, -25 PNP BC369 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VEBO IC PD PD TJ, Tstg Value 20 25 5.0 1.0 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc Adc mW mW/°C Watt mW/°C °C Voltage and current are negative for PNP transistors 1 2 3 CASE 29–04, STYLE 14 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic www.DataSheet4U.com Symbol Rq JA Rq JC Max 200 83.3 Unit °C/W °C/W Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 10 mA, IB = 0) Collector – Base Breakdown Voltage (IC = 100 µA, IE = 0 ) Emitter – Base Breakdown Voltage (IE = 100 µA, IC = 0) Collector Cutoff Current (VCB = 25 V, IE = 0) (VCB = 25 V, IE = 0, TJ = 150°C) Emitter Cutoff Current (VEB = 5.0 V, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO — — IEBO — — — — 10 1.0 10 20 25 5.0 — — — — — — Vdc Vdc Vdc µAdc mAdc µAdc ON CHARACTERISTICS DC Current Gain (VCE = 10 V, IC = 5.0 mA) (VCE = 1.0 V...