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BZW04-33B Dataheets PDF



Part Number BZW04-33B
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description Transil diodes
Datasheet BZW04-33B DatasheetBZW04-33B Datasheet (PDF)

BZW04-xx, BZW04-xxB Datasheet 400 W TVS in DO-15 A K DO-15 (JEDEC DO-204AC) K Bidirectional A Unidirectional Product status link BZW04-5V8, BZW04-28, BZW04-48, BZW04-58, BZW04-299, BZW04-376. BZW04-5V8B, BZW04-28B, BZW04-48B, BZW04-58B, BZW04-299B, BZW04-376B. Features • Peak pulse power: – 400 W (10/1000 μs) – up to 2.3 kW (8/20 μs) • Stand-off voltage range from 5.8 V to 376 V • Unidirectional and bidirectional types • Operating Tj max: 175 °C • High power capability at Tj max.: up to 2.

  BZW04-33B   BZW04-33B


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BZW04-xx, BZW04-xxB Datasheet 400 W TVS in DO-15 A K DO-15 (JEDEC DO-204AC) K Bidirectional A Unidirectional Product status link BZW04-5V8, BZW04-28, BZW04-48, BZW04-58, BZW04-299, BZW04-376. BZW04-5V8B, BZW04-28B, BZW04-48B, BZW04-58B, BZW04-299B, BZW04-376B. Features • Peak pulse power: – 400 W (10/1000 μs) – up to 2.3 kW (8/20 μs) • Stand-off voltage range from 5.8 V to 376 V • Unidirectional and bidirectional types • Operating Tj max: 175 °C • High power capability at Tj max.: up to 230 W (10/1000 µs) • Lead finishing: matte tin plating Complies with the following standards • UL94, V0 • J-STD-020 MSL level 1 • J-STD-002, JESD 22-B102 E3 and MIL-STD-750, method 2026 • JESD-201 class 2 whisker test • UL 497B file number: QVGQ2.E136224 • IEC 61000-4-4 level 4: – 4kV • IEC 61000-4-2, C = 150 pF, R = 330 Ω exceeds level 4: – 30 kV (air discharge) – 30 kV (contact discharge) Description The BZW04 TVS series is designed to protect sensitive equipment against electrostatic discharges according to IEC 61000-4-2, MIL STD 883 Method 3015, and electrical overstress such as IEC 61000-4-4 and 5. They are used for surges below 400 W 10/1000 μs. This planar technology makes it compatible with high-end equipment and SMPS where low leakage current and high junction temperature are required to provide reliability and stability over time. DS0660 - Rev 4 - March 2023 For further information contact your local STMicroelectronics sales office. www.st.com BZW04-xx, BZW04-xxB Characteristics 1 Characteristics Table 1. Absolute maximum ratings (Tamb = 25 °C) Symbol Parameter Value Unit VPP Peak pulse voltage IEC 61000-4-2 (C = 150 pF, R = 330 Ω) Contact discharge 30 kV Air discharge 30 PPP Peak pulse power dissipation 10/1000 µs, Tj initial = Tamb 400 W IFSM Non repetitive surge peak forward current for unidirectional types tp = 10 ms, Tj initial = Tamb 30 A Tstg Storage temperature range -65 to +175 °C Tj Operating junction temperature range -55 to +175 °C TL Maximum lead temperature for soldering during 10 s at 5 mm from case 260 °C Figure 1. Electrical characteristics - parameter definitions Figure 2. Pulse definition for electrical characteristics DS0660 - Rev 4 page 2/12 BZW04-xx, BZW04-xxB Characteristics Table 2. Electrical characteristics - parameter values (Tamb = 25 °C, unless otherwise specified) Type BZW04-5V8/B BZW04-28/B BZW04-48/B BZW04-58/B BZW04-299/B BZW04-376/B IRM max at VRM 25 °C µA V 1000 5.8 1 28.2 1 47.8 1 58.1 1 273 1 376 VBR at IBR (1) Min. V mA 6.45 10 31.4 1 53.2 1 64.6 1 304 1 418 1 10 / 1000 µs 8 / 20µs αT C VCL(2)(3) IPP(4) RD VCL(2)(3) IPP(4) RD Max. Max. Max. Max. Max. Typ. V A Ω V A Ω 10-4/°C pF 10.5 38.0 0.088 13.4 174 0.036 5.7 3500 45.7 8.8 1.24 59.0 39 0.621 9.8 510 77.0 5.2 3.50 100 23 1.79 10.3 320 92.0 4.3 4.79 121 19 2.61 10.4 270 438 1.2 85.0 564 4.0 57.0 11.0 85 603 0.8 176 776 3.0 105 11.0 70 1. To calculate VBR versus Tj : VBR at Tj = VBR at 25 °C x (1 + αT x (Tj - 25)) 2. To calculate VCL versus Tj : VCL at Tj = VCL at 25 °C x (1 + αT x (Tj - 25)) 3. To calculate VCL max versus IPPappli: VCL max = VCL - RD x (IPP - IPPappli) where IPPappli is the surge current in the application. 4. Surge capability given for both directions for unidirectional and bidirectional devices DS0660 - Rev 4 page 3/12 1.1 Characteristics (curves) BZW04-xx, BZW04-xxB Characteristics (curves) Figure 3. Maximum peak power dissipation versus initial junction temperature 500 PPP (W) 10/1000 µs Figure 4. Maximum peak pulse power versus exponential pulse duration 10 PPP(kW) Tj initial = 25 °C 400 300 1 200 100 Tj (°C) 0 0 25 50 75 100 125 150 175 200 0.1 0.001 0.01 0.1 tp(ms) 1 10 Figure 5. Maximum peak pulse current versus clamping voltage 1000 IPP (A) 8/20 µs 10/1000 µs 100 10 BZW04-376/376B BZW04-58/58B BZW04-28/28B BZW04-5V8/5V8B 1 0.1 1 VCL(V) 10 100 1000 Figure 6. Dynamic resistance versus pulse duration RD(Ω) 1000 100 BZW04-376/376B 10 1 BZW04-58/58B BZW04-28/28B 0.1 BZW04-5V8/5V8B 0.01 0.01 0.1 tp (ms) 1 10 Figure 7. Junction capacitance versus reverse applied voltage (unidirectional type) C(pF) 10000 1000 BZW04-5V8 f=1MHz Vosc=30mVRMS Tj=25°C Figure 8. Junction capacitance versus applied voltage (bidirectional type) C(pF) 10000 1000 BZW04-5V8B f=1MHz Vosc=30mVRMS Tj=25°C 100 10 1 1 BZW04-28 100 BZW04-58 10 BZW04-376 VR(V) 1 10 100 1000 1 BZW04-28B BZW04-56B BZW04-376B VR(V) 10 100 1000 DS0660 - Rev 4 page 4/12 BZW04-xx, BZW04-xxB Characteristics (curves) Figure 9. Leakage current versus junction temperature 10000 IR (nA) VR=VRM Figure 10. Peak forward voltage drop versus peak forward current IF (A) 100 1000 100 10 VRM < 10V VRM ≥ 10V 10 Tj = 125 °C Tj = 25 °C 1 Single pulse For products with VRM > 188 V, VF is multiplied by 2 T.


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