Document
BZW04-xx, BZW04-xxB
Datasheet
400 W TVS in DO-15
A K
DO-15 (JEDEC DO-204AC) K
Bidirectional
A Unidirectional
Product status link
BZW04-5V8, BZW04-28, BZW04-48, BZW04-58, BZW04-299, BZW04-376.
BZW04-5V8B, BZW04-28B, BZW04-48B, BZW04-58B, BZW04-299B, BZW04-376B.
Features
• Peak pulse power: – 400 W (10/1000 μs) – up to 2.3 kW (8/20 μs)
• Stand-off voltage range from 5.8 V to 376 V • Unidirectional and bidirectional types • Operating Tj max: 175 °C • High power capability at Tj max.: up to 230 W (10/1000 µs) • Lead finishing: matte tin plating
Complies with the following standards
• UL94, V0 • J-STD-020 MSL level 1 • J-STD-002, JESD 22-B102 E3 and MIL-STD-750, method 2026 • JESD-201 class 2 whisker test • UL 497B file number: QVGQ2.E136224 • IEC 61000-4-4 level 4:
– 4kV • IEC 61000-4-2, C = 150 pF, R = 330 Ω exceeds level 4:
– 30 kV (air discharge) – 30 kV (contact discharge)
Description
The BZW04 TVS series is designed to protect sensitive equipment against electrostatic discharges according to IEC 61000-4-2, MIL STD 883 Method 3015, and electrical overstress such as IEC 61000-4-4 and 5. They are used for surges below 400 W 10/1000 μs. This planar technology makes it compatible with high-end equipment and SMPS where low leakage current and high junction temperature are required to provide reliability and stability over time.
DS0660 - Rev 4 - March 2023 For further information contact your local STMicroelectronics sales office.
www.st.com
BZW04-xx, BZW04-xxB
Characteristics
1
Characteristics
Table 1. Absolute maximum ratings (Tamb = 25 °C)
Symbol
Parameter
Value Unit
VPP Peak pulse voltage
IEC 61000-4-2 (C = 150 pF, R = 330 Ω)
Contact discharge
30
kV
Air discharge
30
PPP Peak pulse power dissipation
10/1000 µs, Tj initial = Tamb
400
W
IFSM
Non repetitive surge peak forward current for unidirectional types
tp = 10 ms, Tj initial = Tamb
30
A
Tstg Storage temperature range
-65 to +175 °C
Tj Operating junction temperature range
-55 to +175 °C
TL Maximum lead temperature for soldering during 10 s at 5 mm from case
260
°C
Figure 1. Electrical characteristics - parameter definitions
Figure 2. Pulse definition for electrical characteristics
DS0660 - Rev 4
page 2/12
BZW04-xx, BZW04-xxB
Characteristics
Table 2. Electrical characteristics - parameter values (Tamb = 25 °C, unless otherwise specified)
Type
BZW04-5V8/B BZW04-28/B BZW04-48/B BZW04-58/B BZW04-299/B BZW04-376/B
IRM max at VRM
25 °C
µA
V
1000
5.8
1
28.2
1
47.8
1
58.1
1
273
1
376
VBR at IBR (1)
Min.
V
mA
6.45 10
31.4
1
53.2
1
64.6
1
304
1
418
1
10 / 1000 µs
8 / 20µs
αT
C
VCL(2)(3) IPP(4)
RD
VCL(2)(3) IPP(4)
RD
Max.
Max. Max.
Max. Max. Typ.
V
A
Ω
V
A
Ω 10-4/°C pF
10.5 38.0 0.088 13.4 174 0.036 5.7 3500
45.7
8.8 1.24
59.0
39 0.621 9.8
510
77.0
5.2 3.50
100
23 1.79 10.3 320
92.0
4.3 4.79
121
19 2.61 10.4 270
438
1.2 85.0
564
4.0 57.0 11.0
85
603
0.8 176
776
3.0 105 11.0
70
1. To calculate VBR versus Tj : VBR at Tj = VBR at 25 °C x (1 + αT x (Tj - 25)) 2. To calculate VCL versus Tj : VCL at Tj = VCL at 25 °C x (1 + αT x (Tj - 25)) 3. To calculate VCL max versus IPPappli: VCL max = VCL - RD x (IPP - IPPappli) where IPPappli is the surge current in the
application.
4. Surge capability given for both directions for unidirectional and bidirectional devices
DS0660 - Rev 4
page 3/12
1.1
Characteristics (curves)
BZW04-xx, BZW04-xxB
Characteristics (curves)
Figure 3. Maximum peak power dissipation versus initial junction temperature
500 PPP (W)
10/1000 µs
Figure 4. Maximum peak pulse power versus exponential pulse duration
10 PPP(kW)
Tj initial = 25 °C
400
300 1
200
100
Tj (°C)
0
0
25
50
75
100
125
150
175
200
0.1 0.001
0.01
0.1
tp(ms)
1
10
Figure 5. Maximum peak pulse current versus clamping voltage
1000 IPP (A)
8/20 µs 10/1000 µs
100
10
BZW04-376/376B
BZW04-58/58B BZW04-28/28B BZW04-5V8/5V8B
1
0.1 1
VCL(V)
10
100
1000
Figure 6. Dynamic resistance versus pulse duration
RD(Ω)
1000
100 BZW04-376/376B
10
1 BZW04-58/58B
BZW04-28/28B 0.1
BZW04-5V8/5V8B
0.01
0.01
0.1
tp (ms)
1
10
Figure 7. Junction capacitance versus reverse applied voltage (unidirectional type)
C(pF)
10000 1000
BZW04-5V8
f=1MHz Vosc=30mVRMS
Tj=25°C
Figure 8. Junction capacitance versus applied voltage (bidirectional type)
C(pF)
10000 1000
BZW04-5V8B
f=1MHz Vosc=30mVRMS
Tj=25°C
100
10
1 1
BZW04-28 100
BZW04-58
10 BZW04-376
VR(V)
1
10
100
1000
1
BZW04-28B BZW04-56B
BZW04-376B
VR(V)
10
100
1000
DS0660 - Rev 4
page 4/12
BZW04-xx, BZW04-xxB
Characteristics (curves)
Figure 9. Leakage current versus junction temperature
10000 IR (nA)
VR=VRM
Figure 10. Peak forward voltage drop versus peak forward current
IF (A)
100
1000 100 10
VRM < 10V VRM ≥ 10V
10
Tj = 125 °C
Tj = 25 °C
1
Single pulse
For products with VRM > 188 V, VF is multiplied by 2
T.