BC372

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC372/D High Voltage Darlington Transistors NPN Silicon BC372 BC373 COLLECTOR 3 BASE 2 1 2 EMITTER 1 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C www.DataSheet4U.com Symbol VCES VCBO VEBO IC PD PD TJ, Tstg BC372 100 100 12 BC373 80 80 Unit Vdc Vdc Vdc Adc mW mW/°C Watt mW/°C °C 1.0 625 5.0 1.5 12 –55 to +150 Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol Rq JA Rq JC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 100 m Adc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 m Adc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 m Adc, IC = 0) Collector Cutoff Current (VCB = 80 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) Emitter Cutoff Current (VEB = 10 V, IC = 0) 1. Pulse Test: Pulse Width = 300 m s, Duty Cycle 2.0%. BC372 BC373 IEBO V(BR)CES BC372 BC373 V(BR)CBO BC372 BC373 V(BR)EBO ICBO — — — — — — 100 100 100 nAdc 100 80 12 — — — — — — Vdc nAdc 100 80 — — — — Vdc Vdc Motorola Small–Signal Transistors,...