CS2609
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
Features
● VDS = 20V,ID =2.5A RDS(ON) < 70mΩ @ V...
CS2609
Dual Enhancement Mode Field Effect
Transistor (N and P Channel)
Features
● VDS = 20V,ID =2.5A RDS(ON) < 70mΩ @ VGS =4.5V RDS(ON) < 130mΩ @ VGS =2.5V
● VDS = -20V,ID =-2.5A RDS(ON) < 160mΩ @ VGS =-4.5V RDS(ON) < 240mΩ @ VGS =-2.5V
● Super high dense cell design for extremely low RDS(ON) ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
Schematic Diagram
Application
● Battery protection ● Load switch ● Power management
Package Marking and Ordering Information
Device Marking
Device
Device Package
2609
CS2609
TSOP-6
Reel Size --
Tape width --
Quantity --
Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V）
VGS Gate-Source Voltage (VDS=0V)
ID IDM (pluse)
Drain Current-Continuous Drain Current-Continuous@ Current-Pulsed (Note 1)
PD Maximum Power Dissipation
TJ,TSTG
Operating Junction and Storage Temperature Range
N-ch
P-ch
20 -20
±12
±12
2.5 -2.5
...
