BC447

BC447, BC449, BC449A High Voltage Transistors NPN Silicon MAXIMUM RATINGS Rating Collector-Emitter Voltage BC447 BC449, BC449A Collector-Base Voltage BC447 BC449, BC449A Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Moisture Sensitivity Level (MSL) Electrostatic Discharge (ESD) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 80 100 80 100 5.0 300 625 5.0 1.5 12 -55 to +150 MSL: 1 NA Symbol RθJA RθJC Max 200 83.3 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C Unit °C/W °C/W http://onsemi.com COLLECTOR 1 2 BASE 3 EMITTER 1 23 CASE 29 TO-92 STYLE 17 MARKING DIAGRAM BC 44xx YWW BC44xx = Specific Device Code xx = 7, 9 or 9A Y = Year WW = Work Week ORDERING INFORMATION Device Package Shipping BC447 TO-92 5000 Units/Box BC449 TO-92 5000 Units/Box BC449A TO-92 5000 Units/Box © Semiconductor Components Industries, LLC, 2003 March, 2003 - Rev. 2 1 Publication Order Number: BC447/D BC447, BC449, BC449A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) BC447 BC449, BC449A V(BR)CEO Collector - Base Breakdown Voltage (IC = 100 µAdc, IE = 0) BC447 BC449, BC449A...