BC449A

BC447, BC449, BC449A High Voltage Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Collector-Emitter Voltage BC447 BC449, BC449A Collector-Base Voltage BC447 BC449, BC449A Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Moisture Sensitivity Level (MSL) Electrostatic Discharge (ESD) Symbol VCEO 80 100 VCBO 80 100 VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg -55 to +150 MSL: 1 NA Watts mW/°C °C 1 2 3 mW mW/°C 5.0 300 Vdc mAdc Vdc Value Unit Vdc 2 BASE 3 EMITTER COLLECTOR 1 CASE 29 TO-92 STYLE 17 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Symbol RθJA RθJC Max 200 83.3 Unit °C/W °C/W MARKING DIAGRAM BC 44xx YWW BC44xx xx Y WW = Specific Device Code = 7, 9 or 9A = Year = Work Week ORDERING INFORMATION Device BC447 BC449 BC449A Package TO-92 TO-92 TO-92 Shipping 5000 Units/Box 5000 Units/Box 5000 Units/Box © Semiconductor Components Industries, LLC, 2003 1 March, 2003 - Rev. 2 Publication Order Number: BC447/D BC447, BC449, BC449A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Emitter - Base Breakdown Voltage (IE = 10 µAdc, IC =...