BC489A

BC489, BC489A High Current Transistors NPN Silicon Features These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage Collector −Base Voltage Collector −Emitter Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Operating and Storage Junction Temperature Range VCEO VCBO VEBO IC PD 80 Vdc 80 Vdc 5.0 Vdc 0.5 Adc 625 mW 5.0 mW/°C PD 1.5 W 12 mW/°C TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com COLLECTOR 1 2 BASE 3 EMITTER TO−92 CASE 29 STYLE 17 123 STRAIGHT LEAD BULK PACK 1 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM BC 489x AYWW G G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 3 1 489x = 489A A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot ...