BC489, BC489A
High Current Transistors
NPN Silicon
Features
• These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Symbo...
BC489, BC489A
High Current
Transistors
NPN Silicon
Features
These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage Collector −Base Voltage Collector −Emitter Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Operating and Storage Junction Temperature Range
VCEO VCBO VEBO
IC PD
80 Vdc
80 Vdc
5.0 Vdc
0.5 Adc
625 mW 5.0 mW/°C
PD 1.5 W 12 mW/°C
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
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COLLECTOR 1
2 BASE
3 EMITTER
TO−92 CASE 29 STYLE 17
123 STRAIGHT LEAD
BULK PACK
1 2 3
BENT LEAD TAPE & REEL AMMO PACK
MARKING DIAGRAM
BC 489x AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 3
1
489x = 489A A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot ...