BC490A

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC490/D High Current Transistors PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO –80 Vdc VCBO –80 Vdc VEBO –4.0 Vdc IC –0.5 Adc PD 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watt Derate above 25°C 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junction to Case RqJC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = –10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –10 mAdc, IC = 0) Collector Cutoff Current (VCB = –60 Vdc, IE = 0) ON CHARACTERISTICS* V(BR)CEO V(BR)CBO V(BR)EBO ICBO DC Current Gain (IC = –10 mAdc, VCE = –2.0 Vdc) (IC = –100 mAdc, VCE = –2.0 Vdc) (IC = –1.0 Adc, VCE = –5.0 Vdc) BC490 BC490A 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%. hFE Min –80 –80 –4.0 — 40 60 100 15 BC490,A 1 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) Typ Max Unit — — Vdc — — Vdc — — Vdc — –100 nAdc —— — 400 140 250 —— ...