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BC516 Dataheets PDF



Part Number BC516
Manufacturers NXP
Logo NXP
Description PNP Darlington transistor
Datasheet BC516 DatasheetBC516 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC516 PNP Darlington transistor Product specification Supersedes data of 1997 Apr 16 1999 Apr 23 Philips Semiconductors PNP Darlington transistor Product specification BC516 FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V) • Very high DC current gain (min. 30000). APPLICATIONS • Where very high amplification is required. DESCRIPTION PNP Darlington transistor in a TO-92; SOT54 plastic package. NPN complement: BC517. PINNI.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC516 PNP Darlington transistor Product specification Supersedes data of 1997 Apr 16 1999 Apr 23 Philips Semiconductors PNP Darlington transistor Product specification BC516 FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V) • Very high DC current gain (min. 30000). APPLICATIONS • Where very high amplification is required. DESCRIPTION PNP Darlington transistor in a TO-92; SOT54 plastic package. NPN complement: BC517. PINNING PIN 1 2 3 emitter base collector DESCRIPTION handbook, halfpage 1 2 3 23 TR1 TR2 1 MAM303 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES VEBO IC ICM IB Ptot Tstg Tj Tamb PARAMETER CONDITIONS collector-base voltage (open emitter) open emitter collector-emitter voltage emitter-base voltage VBE = 0 open collector collector current (DC) peak collector current base current (DC) total power dissipation storage temperature Tamb ≤ 25 °C; note 1 junction temperature operating ambient temperature Note 1. Transistor mounted on an FR4 printed-circuit board. MIN. − − − − − − − −65 − −65 MAX. −40 −30 −10 −500 −800 −100 500 +150 150 +150 UNIT V V V mA mA mA mW °C °C °C 1999 Apr 23 2 Philips Semiconductors PNP Darlington transistor Product specification BC516 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-a thermal resistance from junction to ambient note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. VALUE 250 UNIT K/W CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO IEBO hFE VCEsat VBEsat VBEon fT collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage base-emitter on-state voltage transition frequency IE = 0; VCB = −30 V IC = 0; VEB = −10 V IC = −20 mA; VCE = −2 V; see Fig.2 IC = −100 mA; IB = −0.1 mA IC = −100 mA; IB = −0.1 mA IC = −10 mA; VCE = −5 V IC = −30 mA; VCE = −5 V; f = 100 MHz − − 30 000 − − − − − − − − − − 220 −100 −100 − −1 −1.5 −1.4 − nA nA V V V MHz 100000 handbook, full pagewidth hFE 80000 60000 40000 20000 0 −1 VCE = −2 V. MGD836 −10 −102 Fig.2 DC current gain; typical values. IC (mA) −103 1999 Apr 23 3 Philips Semiconductors PNP Darlington transistor PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads Product specification BC516 SOT54 c E d 1 2 D 3 b1 AL L1 b e1 e 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.66 0.45 0.40 0.56 0.40 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION IEC REFERENCES JEDEC EIAJ EUROPEAN PROJECTION SOT54 TO-92 SC-43 ISSUE DATE 97-02-28 1999 Apr 23 4 Philips Semiconductors PNP Darlington transistor Product specification BC516 DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 23 5 Philips Semiconductors PNP Darlington transistor NOTES Product specification BC516 1999 Apr 23 6 Philips Semiconductors PNP Darlington transistor NOTES Product specification BC516 1999 Apr 23 7 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 07.


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