Document
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC516 PNP Darlington transistor
Product specification Supersedes data of 1997 Apr 16
1999 Apr 23
Philips Semiconductors
PNP Darlington transistor
Product specification
BC516
FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V) • Very high DC current gain (min. 30000).
APPLICATIONS • Where very high amplification is required.
DESCRIPTION PNP Darlington transistor in a TO-92; SOT54 plastic package. NPN complement: BC517.
PINNING
PIN 1 2 3
emitter base collector
DESCRIPTION
handbook, halfpage
1 2 3
23
TR1 TR2
1
MAM303
Fig.1 Simplified outline (TO-92; SOT54) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO VCES VEBO IC ICM IB Ptot Tstg Tj Tamb
PARAMETER
CONDITIONS
collector-base voltage (open emitter) open emitter
collector-emitter voltage emitter-base voltage
VBE = 0 open collector
collector current (DC)
peak collector current
base current (DC)
total power dissipation storage temperature
Tamb ≤ 25 °C; note 1
junction temperature
operating ambient temperature
Note 1. Transistor mounted on an FR4 printed-circuit board.
MIN.
− − − − − − − −65 − −65
MAX.
−40 −30 −10 −500 −800 −100 500 +150 150 +150
UNIT
V V V mA mA mA mW °C °C °C
1999 Apr 23
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Philips Semiconductors
PNP Darlington transistor
Product specification
BC516
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE 250
UNIT K/W
CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO IEBO hFE VCEsat VBEsat VBEon fT
collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage base-emitter saturation voltage base-emitter on-state voltage transition frequency
IE = 0; VCB = −30 V IC = 0; VEB = −10 V IC = −20 mA; VCE = −2 V; see Fig.2 IC = −100 mA; IB = −0.1 mA IC = −100 mA; IB = −0.1 mA IC = −10 mA; VCE = −5 V IC = −30 mA; VCE = −5 V; f = 100 MHz
− − 30 000 − − − −
− − − − − − 220
−100 −100 − −1 −1.5 −1.4 −
nA nA
V V V MHz
100000
handbook, full pagewidth
hFE 80000
60000
40000
20000
0 −1
VCE = −2 V.
MGD836
−10 −102
Fig.2 DC current gain; typical values.
IC (mA)
−103
1999 Apr 23
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Philips Semiconductors
PNP Darlington transistor
PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads
Product specification
BC516
SOT54
c
E d
1 2
D
3
b1
AL L1
b
e1 e
0 2.5 5 mm scale
DIMENSIONS (mm are the original dimensions)
UNIT A b b1 c D d E e e1 L L1(1)
mm
5.2 5.0
0.48 0.66 0.45 0.40 0.56 0.40
4.8 4.4
1.7 1.4
4.2 3.6
2.54
1.27
14.5 12.7
2.5
Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE VERSION
IEC
REFERENCES
JEDEC
EIAJ
EUROPEAN PROJECTION
SOT54
TO-92
SC-43
ISSUE DATE 97-02-28
1999 Apr 23
4
Philips Semiconductors
PNP Darlington transistor
Product specification
BC516
DEFINITIONS
Data Sheet Status
Objective specification Preliminary specification Product specification
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Apr 23
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Philips Semiconductors
PNP Darlington transistor
NOTES
Product specification
BC516
1999 Apr 23
6
Philips Semiconductors
PNP Darlington transistor
NOTES
Product specification
BC516
1999 Apr 23
7
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