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BC516 Dataheets PDF



Part Number BC516
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description PNP Silicon Darlington Transistor
Datasheet BC516 DatasheetBC516 Datasheet (PDF)

PNP Silicon Darlington Transistor q High current gain q High collector current q Complementary type: BC 517 (NPN) BC 516 2 3 1 Type BC 516 Marking – Ordering Code Q62702-C944 Pin Configuration 123 CBE Package1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 ˚C Junction temperature Storage temperature range Thermal Resistance Juncti.

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PNP Silicon Darlington Transistor q High current gain q High collector current q Complementary type: BC 517 (NPN) BC 516 2 3 1 Type BC 516 Marking – Ordering Code Q62702-C944 Pin Configuration 123 CBE Package1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case2) Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values Unit 30 V 40 10 500 mA 800 100 200 625 mW 150 ˚C – 65 … + 150 Rth JA Rth JC ≤ 200 ≤ 135 K/W 1) For detailed information see chapter Package Outlines. 2) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 1 5.91 BC 516 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 10 mA Collector-base breakdown voltage IC = 100 µA Emitter-base breakdown voltage IE = 10 µA Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 ˚C Emitter cutoff current VEB = 4 V DC current gain IC = 20 mA; VCE = 2 V Collector-emitter saturation voltage1) IC = 100 mA; IB = 0.1 mA Base-emitter voltage1) IC = 10 mA; VCE = 5 V AC characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 20 MHz Output capacitance VCB = 10 V, f = 1 MHz Symbol Values Unit min. typ. max. V(BR)CE0 30 – V(BR)CB0 40 – V(BR)EB0 10 – ICB0 –– –– IEB0 – – hFE 30 000 – VCEsat – – VBE – – –V – – 100 nA 10 µA 100 µA –– 1V 1.4 fT Cobo – – 200 – 3.5 – MHz pF 1) Pulse test: t ≤ 300 µs, D ≤ 2 %. Semiconductor Group 2 BC 516 Total power dissipation Ptot = f (TA; TC) Collector cutoff current ICB0 = f (TA) VCB = 30 V Permissible pulse load RthJA = f (tp) Transition frequency fT = f (IC) VCE = 5 V Semiconductor Group 3 BC 516 Collector-emitter saturation voltage IC = f (VCEsat) hFE = 1000 Base-emitter saturation voltage IC = f (VBEsat) hFE = 1000 DC current gain hFE = f (IC) VCE = 2 V Capacitance C = f (VEB, VCB) Semiconductor Group 4 .


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