Document
Amplifier Transistors
NPN Silicon
BC546B, BC547A, B, C, BC548B, C
Features
• Pb−Free Packages are Available*
DATA SHEET www.onsemi.com
COLLECTOR 1
2 BASE
3 EMITTER
MAXIMUM RATINGS
Rating Collector - Emitter Voltage
Symbol Value
Unit
VCEO
Vdc
BC546
65
BC547
45
BC548
30
Collector - Base Voltage
VCBO
Vdc
BC546
80
BC547
50
BC548
30
Emitter - Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C
VEBO IC PD
6.0
Vdc
100
mAdc
625
mW
5.0
mW/°C
Total Device Dissipation @ TC = 25°C
PD
1.5
W
Derate above 25°C
12
mW/°C
Operating and Storage Junction Temperature Range
TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
TO−92 CASE 29 STYLE 17
123 STRAIGHT LEAD
1 2 3
BENT LEAD TAPE & REEL
MARKING DIAGRAM
BC 54xy AYWW G
G
x = 6, 7, or 8 y = A, B or C A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
1
August, 2021 − Rev. 8
Publication Order Number: BC546/D
BC546B, BC547A, B, C, BC548B, C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0)
V(BR)CEO
BC546
65
BC547
45
BC548
30
Collector − Base Breakdown Voltage (IC = 100 mAdc)
V(BR)CBO
BC546
80
BC547
50
BC548
30
Emitter − Base Breakdown Voltage (IE = 10 mA, IC = 0)
V(BR)EBO
BC546
6.0
BC547
6.0
BC548
6.0
Collector Cutoff Current (VCE = 70 V, VBE = 0) (VCE = 50 V, VBE = 0) (VCE = 35 V, VBE = 0) (VCE = 30 V, TA = 125°C)
ON CHARACTERISTICS
ICES
BC546
−
BC547
−
BC548
−
BC546/547/548
−
DC Current Gain (IC = 10 mA, VCE = 5.0 V)
hFE
BC547A
−
BC546B/547B/548B
−
BC548C
−
(IC = 2.0 mA, VCE = 5.0 V)
BC546
110
BC547
110
BC548
110
BC547A
110
BC546B/547B/548B
200
BC547C/BC548C
420
(IC = 100 mA, VCE = 5.0 V)
BC547A/548A
−
BC546B/547B/548B
−
BC548C
−
Collector − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) (IC = 10 mA, IB = See Note 1)
Base − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base − Emitter On Voltage (IC = 2.0 mA, VCE = 5.0 V) (IC = 10 mA, VCE = 5.0 V)
SMALL−SIGNAL CHARACTERISTICS
VCE(sat)
VBE(sat) VBE(on)
− − − −
0.55 −
Current − Gain − Bandwidth P.