BC547A

Amplifier Transistors NPN Silicon BC546B, BC547A, B, C, BC548B, C Features Pb−Free Packages are Available* DATA SHEET www.onsemi.com COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Collector - Emitter Voltage Symbol Value Unit VCEO Vdc BC546 65 BC547 45 BC548 30 Collector - Base Voltage VCBO Vdc BC546 80 BC547 50 BC548 30 Emitter - Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VEBO IC PD 6.0 Vdc 100 mAdc 625 mW 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 W Derate above 25°C 12 mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. TO−92 CASE 29 STYLE 17 123 STRAIGHT LEAD 1 2 3 BENT LEAD TAPE & REEL MARKING DIAGRAM BC 54xy AYWW G G x = 6, 7, or 8 y = A, B or C A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. *For additional information on our Pb−Free strategy and solderi...