NPN Epitaxial Silicon Transistor
BC546 / BC547 / BC548 / BC549 / BC550
Features
• Switching and Amplifier • High−Voltag...
NPN Epitaxial Silicon
Transistor
BC546 / BC547 / BC548 / BC549 / BC550
Features
Switching and Amplifier High−Voltage: BC546, VCEO = 65 V Low−Noise: BC549, BC550 Complement to BC556, BC557, BC558, BC559, and BC560 These are Pb−Free Devices
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Collector−Base Voltage BC546 BC547 / BC550 BC548 / BC549
VCBO
V 80 50 30
Collector−Emitter Voltage BC546 BC547 / BC550 BC548 / BC549
VCEO
V 65 45 30
Emitter−Base Voltage BC546 / BC547
VEBO
BC548 / BC549 / BC550
V 6 5
Collector Current (DC)
IC
100
mA
Collector Power Dissipation
PC
500
mW
Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
−65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
DATA SHEET www.onsemi.com
123
TO−92 CASE 135AN
TO−92 CASE 135AR 1 2 3 1. Collector 2. Base 3. Emitter
MARKING DIAGRAM
ABC 5xyz YWW
BC5xyz x y z
A Y WW
= Device Code = 4 or 5 = 6, 7, 8, 9 or 0 = A, B, C = Assembly Location = Year = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2002
1
August, 2021 − Rev. 4
Publication Order Number: BC550/D
BC546 / BC547 / BC548 / BC549 / BC550
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test C...