P-Channel Trench Power MOSFET
CS2301
P-Channel Trench Power MOSFET
General Description
The CS2301 uses advanced trench technology to provide excelle...
Description
CS2301
P-Channel Trench Power MOSFET
General Description
The CS2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. This device is suitable for use as a battery protection or in other switching application.
Features
● VDS = -20V,ID =-3A RDS(ON) < 90mΩ @ VGS =-4.5V RDS(ON) < 120mΩ @ VGS =-2.5V
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
Application
● Battery protection ● Load switch ● Power management
Schematic Diagram Marking and pin Assignment
SOT-23 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
2301
CS2301
SOT-23
Reel Size Ø180mm
Tape width 8mm
Quantity 3000 units
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V)
VGS Gate-Source Voltage (VDS=0V)
ID IDM (pluse)
Drain Current-Continuous Drain Current-Continuous@ Current-Pulsed (...
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