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CS2301

CASS

P-Channel Trench Power MOSFET

CS2301 P-Channel Trench Power MOSFET General Description The CS2301 uses advanced trench technology to provide excelle...


CASS

CS2301

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Description
CS2301 P-Channel Trench Power MOSFET General Description The CS2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -2.5V. This device is suitable for use as a battery protection or in other switching application. Features ● VDS = -20V,ID =-3A RDS(ON) < 90mΩ @ VGS =-4.5V RDS(ON) < 120mΩ @ VGS =-2.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● Battery protection ● Load switch ● Power management Schematic Diagram Marking and pin Assignment SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package 2301 CS2301 SOT-23 Reel Size Ø180mm Tape width 8mm Quantity 3000 units Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V) VGS Gate-Source Voltage (VDS=0V) ID IDM (pluse) Drain Current-Continuous Drain Current-Continuous@ Current-Pulsed (...




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