CS8810

N-Channel Trench Power MOSFET General Description The CS8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching applications. Features ● VDS = 20V,ID =7A RDS(ON) < 28mΩ @ VGS =4.5V RDS(ON) < 35mΩ @ VGS =2.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● Battery protection ● Load switch ● Power management CS8810 Schematic Diagram Marking and pin Assignment TSSOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package CS8810 CS8810 TSSOP-8 Reel Size Ø330mm Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID IDM (pluse) Drain Current-Continuous (TA=25°C) Drain Current-Continuous (TA=70°C) Drain Current-Continuous@ Current-P...