Power MOSFET. CSD20N45 Datasheet


CSD20N45 MOSFET. Datasheet pdf. Equivalent


Part Number

CSD20N45

Description

N-Channel Trench Power MOSFET

Manufacture

CASS

Total Page 6 Pages
Datasheet
Download CSD20N45 Datasheet


CSD20N45
N-Channel Trench Power MOSFET
CSD20N45
General Description
The CSD20N45 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
wide variety of applications.
Features
VDS = 20V,ID =85A
RDS(ON) < 5.5mΩ @ VGS =4.5V
RDS(ON) < 9mΩ @ VGS =2.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Application
Battery Protection
Load switch
Power management
100% UIS TESTED!
100% ΔVds TESTED!
Schematic Diagram
Marking and pin Assignment
TO-252(DPAK) top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
CSD20N45
CSD20N45
TO-252
Reel Size
325mm
Tape width
16mm
Quantity
2500
Table 1. Absolute Maximum Ratings (TA=25)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V
VGS
ID
IDM (pluse)
PD
EAS
Gate-Source Voltage (VDS=0V)
Drain Current-Continuous(Tc=25) (Note 1)
Drain Current-Continuous(Tc=100)
Drain Current-Continuous@ Current-Pulsed (Note 2)
Maximum Power Dissipation(Tc=25)
Maximum Power Dissipation(Tc=100)
Avalanche energy (Note 3)
TJ,TSTG
Operating Junction and Storage Temperature Range
Value
20
±12
85
59
340
87
43
340
-55 To 175
Unit
V
V
A
A
A
W
W
mJ
Table 2. Thermal Characteristic
Symbol
Parameter
RJC
Thermal Resistance,Junction-to-Case
Typ Max Unit
- 1.72 /W
CASS SEMICONDUCTOR CO., LTD
-1-
http://www.casssemi.com
V2.0

CSD20N45
CSD20N45
Table 3. Electrical Characteristics (TA=25unless otherwise noted)
Symbol
Parameter
Conditions
On/Off States
BVDSS Drain-Source Breakdown Voltage
VGS=0V ID=250μA
IDSS Zero Gate Voltage Drain Current
VDS=20V,VGS=0V
IGSS Gate-Body Leakage Current
VGS=±12V,VDS=0V
VGS(th) Gate Threshold Voltage
VDS=VGS,ID=250μA
gFS Forward Transconductance
RDS(ON) Drain-Source On-State Resistance
VDS=5V,ID=15A
VGS=4.5V, ID=20A(Tc=25)
VGS=4.5V, ID=20A (Tc=125)
VGS=2.5V, ID=15A
Dynamic Characteristics
Min
20
0.5
Typ
25
0.7
40
3.9
5.4
6
Max
1
±100
1.1
5.5
8
9
Unit
V
μA
nA
V
S
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
Switching Times
td(on)
Turn-on Delay Time
tr Turn-on Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Source-Drain Diode Characteristics
VDS=15V,VGS=0V,
f=1.0MHz
VGS=0V, VDS=0V,f=1.0MHz
VGS=4.5V, VDS=15V,
RL=0.75,RGEN=3
VGS=4.5V, VDS=10V, ID=12A
2800
353
265
1.1
17
49
74
26
32
3
11
pF
pF
pF
Ω
nS
nS
nS
nS
nC
nC
nC
ISD Source-Drain Current(Body Diode)
VSD Forward on Voltage
trr Body Diode Reverse Recovery Time
Qrr Body Diode Reverse Recovery Charge
VGS=0V,IS=20A
IF=20A, dI/dt=100A/s
IF=20A, dI/dt=100A/s
85 A
1.2 V
23 ns
10 nC
Notes 1.The maximum current rating is package limited.
Notes 2.Repetitive Rating: Pulse width limited by maximum junction temperature
Notes 3.EAS condition: TJ=25,VDD=30V,VG=4.5V, RG=25Ω,
CASS SEMICONDUCTOR CO., LTD
-2-
http://www.casssemi.com
V2.0


Features N-Channel Trench Power MOSFET CSD20N45 General Description The CSD20N45 uses advanced trench technology to provide e xcellent RDS(ON), low gate charge and o peration with gate voltages as low as 2 .5V. This device is suitable for use as a wide variety of applications. Featur es ● VDS = 20V,ID =85A RDS(ON) < 5.5m Ω @ VGS =4.5V RDS(ON) < 9mΩ @ VGS =2. 5V ● High Power and current handing c apability ● Lead free product is acqu ired ● Surface Mount Package Applicat ion ● Battery Protection ● Load swi tch ● Power management 100% UIS TESTE D! 100% ΔVds TESTED! Schematic Diagra m Marking and pin Assignment TO-252(DPA K) top view Package Marking and Orderi ng Information Device Marking Device Device Package CSD20N45 CSD20N45 TO -252 Reel Size 325mm Tape width 16mm Quantity 2500 Table 1. Absolute Maxim um Ratings (TA=25℃) Symbol Paramete r VDS Drain-Source Voltage (VGS=0V) VGS ID IDM (pluse) PD EAS Gate-Source Voltage (VDS=0V) Drain Current-Continuous(Tc=25℃) (Note 1) D.
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