N-Channel Trench Power MOSFET
CS3400
N-Channel Trench Power MOSFET
General Description
The CS3400 uses advanced trench technology to provide excelle...
Description
CS3400
N-Channel Trench Power MOSFET
General Description
The CS3400 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
Features
● VDS = 30V,ID =5.8A RDS(ON) < 30mΩ @ VGS =10V RDS(ON) < 40mΩ @ VGS =4.5V RDS(ON) < 55mΩ @ VGS =2.5V
● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package
Schematic Diagram Marking and pin Assignment
Application
● PWM applications ● Load switch ● Power management
Package Marking and Ordering Information
Device Marking
Device
Device Package
3400
CS3400
SOT-23-3L
SOT-23-3L top view
Reel Size Ø180mm
Tape width 8mm
Quantity 3000 units
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V)
VGS Gate-Source Voltage (VDS=0V)
ID IDM (pluse)
Drain Current-Continuous Drain Current-Continuous@ Curre...
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