CSD30N39

CSD30N39 N-Channel Trench Power MOSFET General Description The CSD30N39 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Features ● VDS = 30V,ID =85A RDS(ON) < 5.8mΩ @ VGS =10V RDS(ON) < 8mΩ @ VGS =4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● PWM applications ● Load switch ● Power management 100% UIS TESTED! 100% ΔVds TESTED! Schematic Diagram Marking and pin Assignment TO-252(DPAK) top view Package Marking and Ordering Information Device Marking Device Device Package CSD30N39 CSD30N39 TO-252 Reel Size 325mm Tape width 16mm Quantity 2500 Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V） VGS ID IDM (pluse) PD EAS Gate-Source Voltage (VDS=0V) Drain Current-Continuous(Tc=25℃) (Note 1) Drain...