CSD40N160

N-Channel Trench Power MOSFET CSD40N160 General Description The CSD40N160 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Features ● VDS = 40V,ID =30A RDS(ON) < 20mΩ @ VGS =10V RDS(ON) < 34mΩ @ VGS =4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● PWM applications ● Load switch ● Power management 100% UIS TESTED! 100% ΔVds TESTED! Schematic Diagram Marking and pin Assignment TO-252(DPAK) top view Package Marking and Ordering Information Device Marking Device Device Package CSD40N160 CSD40N160 TO-252 Reel Size 325mm Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V） VGS Gate-Source Voltage (VDS=0V) ID IDM (pluse) PD EAS Drain Current-Continuous(Tc=25℃) Drain Current-Continuous(Tc=100℃) Drai...