Power MOSFET. D444 Datasheet


D444 MOSFET. Datasheet pdf. Equivalent


D444


N-Channel Trench Power MOSFET
N-Channel Trench Power MOSFET
General Description
The D444 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). Those devices are suitable for use in PWM, load switching and general purpose applications.
Features
● VDS=60V; ID=15A RDS(ON)<40mΩ @ VGS=10V
● Ultra Low On-Resistance ● High UIS and UIS 100% Test
Application
● Power switching application ● load switching

D444

To-252 Top View

Schematic Diagram

VDS =60V ID = 15A
RDS(ON)= 32mΩ

Package Marking and Ordering Information

Device Marking

Device

Device Package

D444

D444

TO-252

Reel Size -

Table 1. Absolute Maximum Ratings (TA=25℃)

Symbol

Parameter

VDS Drain-Source Voltage (VGS=0V)

VGS Gate-Source Voltage (VDS=0V)

ID (DC) ID (DC) IDM (pluse) PD EAS

Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation(Tc=25℃) Single Pulse Avalanche Energy (Note 2)

TJ,TSTG

Operat...



D444
N-Channel Trench Power MOSFET
General Description
The D444 combines advanced trench
MOSFET technology with a low resistance package to
provide extremely low RDS(ON). Those devices are
suitable for use in PWM, load switching and general
purpose applications.
Features
VDS=60V; ID=15A
RDS(ON)<40mΩ @ VGS=10V
Ultra Low On-Resistance
High UIS and UIS 100% Test
Application
Power switching application
load switching
D444
To-252 Top View
Schematic Diagram
VDS =60V
ID = 15A
RDS(ON)= 32mΩ
Package Marking and Ordering Information
Device Marking
Device
Device Package
D444
D444
TO-252
Reel Size
-
Table 1. Absolute Maximum Ratings (TA=25)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V)
VGS Gate-Source Voltage (VDS=0V)
ID (DC)
ID (DC)
IDM (pluse)
PD
EAS
Drain Current (DC) at Tc=25
Drain Current (DC) at Tc=100
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation(Tc=25)
Single Pulse Avalanche Energy (Note 2)
TJ,TSTG
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition:TJ=25,VDD=30V,VG=10V, RG=25Ω
Tape width
-
Quantity
-
Value
60
±20
15
10.5
60
23
25
-55 To 175
Unit
V
V
A
A
A
W
mJ
CASS SEMICONDUCTOR CO., LTD
-1-
http://www.casssemi.com V3.0

D444
Table 2. Thermal Characteristic
Symbol
Parameter
RJC
Thermal Resistance,Junction-to-Case
Value
---
D444
Max
6.6
Unit
/W
Table 3. Electrical Characteristics (TA=25unless otherwise noted)
Symbol
Parameter
Conditions
Min
On/Off States
BVDSS
IDSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25)
Zero Gate Voltage Drain Current(Tc=100)
VGS=0V ID=250μA
VDS=60V,VGS=0V
VDS=60V,VGS=0V
60
IGSS Gate-Body Leakage Current
VGS=±20V,VDS=0V
VGS(th) Gate Threshold Voltage
VDS=VGS,ID=250μA
1
RDS(ON) Drain-Source On-State Resistance
VGS=10V, ID=12A
RDS(ON) Drain-Source On-State Resistance
VGS=4.5V, ID=6A
Typ
2.3
32
37
Max Unit
1
5
±100
3
45
50
V
μA
μA
nA
V
Dynamic Characteristics
gFS Forward Transconductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Switching Times
td(on)
Turn-on Delay Time
tr Turn-on Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Source-Drain Diode Characteristics
VDS=10V,ID=15A
VDS=30V,VGS=0V
f=1.0MHz
VDS=30V,ID=15A
VGS=10V
VDS=30V,RL=2.5Ω
VGS=10V,RG=3Ω
12
778
66
41
13.5
3.2
6.2
4.2
3.4
16
2
S
PF
PF
PF
nC
nC
nC
nS
nS
nS
nS
ISD Source-Drain Current(Body Diode)
15 A
ISDM Pulsed Source-Drain Current(Body Diode)
VSD Forward On Voltage(Note 1)
trr Reverse Recovery Time(Note 1)
Qrr Reverse Recovery Charge(Note 1)
TJ=25,ISD=1A,VGS=0V
TJ=25,IF=15A
di/dt=100A/μs
60 A
0.74 0.99
V
27 nS
30 nC
ton Forward Turn-on Time
Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)
Notes 1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, Starting TJ=25
CASS SEMICONDUCTOR CO., LTD
-2-
http://www.casssemi.com V3.0




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