N-Channel Trench Power MOSFET
General Description
The CSJ60N62/CSJ60N62A is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching.
Features
● VDS=60V;ID=80A@ VGS=10V; RDS(ON)<7.2mΩ @ VGS=10V
● Ultra Low On-Resistance ● High UIS and UIS 100% Test
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