CS64N18

CS64N18 N-Channel Trench Power MOSFET General Description The CS64N18 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features ● VDS=82V; ID=137A@ VGS=10V; RDS(ON)<6.0mΩ @ VGS=10V ● Special Designed for E-Bike Controller Application ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● 64V E-Bike Controller Applications ● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply To-220 Top View Schematic Diagram VDS = 82 V ID = 137 A RDS(ON) = 4.5 mΩ Package Marking and Ordering Information Device Marking Device Device Package CS64N18 CS64N18 TO-220 Reel Size - Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V) VGS Gate-Source Voltage (VDS=0V) ID (DC) ID (DC) IDM (pluse) Drain Current (DC) at Tc=25℃ Drain Cu...