N-Channel Trench Power MOSFET
General Description
The CS60N06 is N-channel MOS Field Effect Transistor designed for high...
N-Channel Trench Power MOSFET
General Description
The CS60N06 is N-channel MOS Field Effect
Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching applications.
Features
● VDS=60V；ID=80A@ VGS=10V； RDS(ON)<7.2mΩ @ VGS=10V
● Ultra Low On-Resistance ● High UIS and UIS 100% Test
Application
● Hard Switched and High Frequency Circuits ● Uninterruptible Power Supply
CS60N06
To-220 Top View
Schematic Diagram
VDS = 60 V ID = 80 A RDS(ON) = 6.2 mΩ
Package Marking and Ordering Information
Device Marking
Device
Device Package
CS60N06
CS60N06
TO-220
Reel Size -
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V）
VGS Gate-Source Voltage (VDS=0V)
ID (DC) ID (DC) IDM (pluse)
Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1)
dv/dt
Peak Diode Recovery Voltage
PD Maximum Po...
