CS50N06

N-Channel Trench Power MOSFET General Description The CS50N06 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). Those devices are suitable for use in PWM, load switching and general purpose applications. Features ● VDS=60V; ID=45A RDS(ON)<15mΩ @ VGS=10V ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● Power switching application ● load switching CS50N06 To-220 Top View Schematic Diagram VDS =60V ID = 45A RDS(ON)= 11.5mΩ Package Marking and Ordering Information Device Marking Device Device Package CS50N06 CS50N06 TO-220 Reel Size - Table 1. Absolute Maximum Ratings (TA=25℃) Symbol Parameter VDS Drain-Source Voltage (VGS=0V) VGS Gate-Source Voltage (VDS=0V) ID (DC) ID (DC) IDM (pluse) Drain Current (DC) at Tc=25℃ Drain Current (DC) at Tc=100℃ Drain Current-Continuous@ Current-Pulsed (Note 1) dv/dt Peak Diode Recovery Voltage PD Maximum Power Dissipation(Tc=25℃) Deratin...