DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC549; BC550 NPN general purpose transistors
Product specific...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC549; BC550
NPN general purpose
transistors
Product specification Supersedes data of 1997 Jun 20 1999 Apr 22
Philips Semiconductors
Product specification
NPN general purpose
transistors
FEATURES Low current (max. 100 mA) Low voltage (max. 45 V). APPLICATIONS Low noise stages in audio frequency equipment. DESCRIPTION
NPN transistor in a TO-92; SOT54 plastic package.
PNP complements: BC559 and BC560.
1 handbook, halfpage
BC549; BC550
PINNING PIN 1 2 3 emitter base collector DESCRIPTION
2 3
3 2 1
MAM182
Fig.1
Simplified outline (TO-92; SOT54) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC549 BC550 VCEO collector-emitter voltage BC549 BC550 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − −65 − −65 30 45 5 100 200 200 500 +150 150 +150 V V V mA mA mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − 30 50 V V MIN. MAX. UNIT
1999 Apr 22
2
Philips Semiconductors
Product specification
NPN general purpose
transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unl...