Amplifier Transistors. BC557A Datasheet


BC557A Transistors. Datasheet pdf. Equivalent


BC557A


Amplifier Transistors
www.DataSheet4U.com

BC556B, BC557A, B, C, BC558B, C Amplifier Transistors
PNP Silicon
Features http://onsemi.com

• Pb−Free Packages are Available*
COLLECTOR 1

MAXIMUM RATINGS
Rating Collector - Emitter Voltage BC556 BC557 BC558 Collector - Base Voltage BC556 BC557 BC558 Emitter - Base Voltage Collector Current − Continuous Collector Current − Peak Base Current − Peak Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range VEBO IC ICM IBM PD PD TJ, Tstg VCBO −80 −50 −30 −5.0 −100 −200 −200 625 5.0 1.5 12 −55 to +150 Vdc mAdc 1 2 mAdc mW mW/°C W mW/°C °C 3 Symbol VCEO −65 −45 −30 Vdc Value Unit Vdc

2 BASE 3 EMITTER

TO−92 CASE 29 STYLE 17

MARKING DIAGRAM

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W

BC 55xx AYWW G G

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.

= Device Code x = 6, 7, or 8 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot ma...



BC557A
www.DataSheet4U.com
BC556B, BC557A, B, C,
BC558B, C
Amplifier Transistors
PNP Silicon
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector - Emitter Voltage
VCEO
Vdc
BC556
−65
BC557
−45
BC558
−30
Collector - Base Voltage
VCBO
Vdc
BC556
−80
BC557
−50
BC558
−30
Emitter - Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current − Peak
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VEBO
IC
ICM
IBM
PD
−5.0
−100
−200
−200
625
5.0
Vdc
mAdc
mAdc
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 W
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
RqJA
200 °C/W
Thermal Resistance,
Junction−to−Case
RqJC
83.3 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 2
1
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COLLECTOR
1
2
BASE
3
EMITTER
TO−92
CASE 29
1
2
STYLE 17
3
MARKING DIAGRAM
BC
55xx
AYWW G
G
BC55x = Device Code
x = 6, 7, or 8
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
BC556B/D

BC557A
BC556B, BC557A, B, C, BC558B, C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min Typ
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −2.0 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = −100 mAdc)
Emitter −Base Breakdown Voltage
(IE = −100 mAdc, IC = 0)
BC556
BC557
BC558
BC556
BC557
BC558
BC556
BC557
BC558
V(BR)CEO
V(BR)CBO
V(BR)EBO
−65
−45
−30
−80
−50
−30
−5.0
−5.0
−5.0
Collector−Emitter Leakage Current
(VCES = −40 V)
(VCES = −20 V)
(VCES = −20 V, TA = 125°C)
BC556
BC557
BC558
BC556
BC557
BC558
ICES
− −2.0
− −2.0
− −2.0
−−
−−
−−
ON CHARACTERISTICS
DC Current Gain
(IC = −10 mAdc, VCE = −5.0 V)
(IC = −2.0 mAdc, VCE = −5.0 V)
(IC = −100 mAdc, VCE = −5.0 V)
Collector −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −0.5 mAdc)
(IC = −10 mAdc, IB = see Note 1)
(IC = −100 mAdc, IB = −5.0 mAdc)
Base −Emitter Saturation Voltage
(IC = −10 mAdc, IB = −0.5 mAdc)
(IC = −100 mAdc, IB = −5.0 mAdc)
Base−Emitter On Voltage
(IC = −2.0 mAdc, VCE = −5.0 Vdc)
(IC = −10 mAdc, VCE = −5.0 Vdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 V, f = 100 MHz)
Output Capacitance
(VCB = −10 V, IC = 0, f = 1.0 MHz)
Noise Figure
(IC = −0.2 mAdc, VCE = −5.0 V,
RS = 2.0 kW, f = 1.0 kHz, Df = 200 Hz)
A Series Device
B Series Devices
C Series Devices
BC557
A Series Device
B Series Devices
C Series Devices
A Series Device
B Series Devices
C Series Devices
hFE
VCE(sat)
VBE(sat)
VBE(on)
BC556
BC557
BC558
BC556
BC557
BC558
fT
Cob
NF
120
120
180
420
−0.55
90
150
270
170
290
500
120
180
300
−0.075
−0.3
−0.25
−0.7
−1.0
−0.62
−0.7
− 280
− 320
− 360
− 3.0
− 2.0
− 2.0
− 2.0
Small−Signal Current Gain
(IC = −2.0 mAdc, VCE = 5.0 V, f = 1.0 kHz)
BC557
A Series Device
B Series Devices
C Series Devices
hfe
125 −
125 −
240 −
450 −
1. IC = −10 mAdc on the constant base current characteristics, which yields the point IC = −11 mAdc, VCE = −1.0 V.
Max
−100
−100
−100
−4.0
−4.0
−4.0
800
220
460
800
−0.3
−0.6
−0.65
−0.7
−0.82
6.0
10
10
10
900
260
500
900
Unit
V
V
V
nA
mA
V
V
V
MHz
pF
dB
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