DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC556; BC557 PNP general purpose transistors
Product specific...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC556; BC557
PNP general purpose
transistors
Product specification Supersedes data of 1997 Mar 27 1999 Apr 15
Philips Semiconductors
Product specification
PNP general purpose
transistors
FEATURES Low current (max. 100 mA) Low voltage (max. 65 V). APPLICATIONS General purpose switching and amplification. DESCRIPTION
PNP transistor in a TO-92; SOT54 plastic package.
NPN complements: BC546 and BC547. PINNING PIN 1 2 3 emitter base collector
BC556; BC557
DESCRIPTION
1 handbook, halfpage
2 3
3 2 1
MAM281
Fig.1
Simplified outline (TO-92; SOT54) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC556 BC557 VCEO collector-emitter voltage BC556 BC557 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C open collector open base − − − − − − − −65 − −65 −65 −45 −5 −100 −200 −200 500 +150 150 +150 V V V mA mA mA mW °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − −80 −50 V V MIN. MAX. UNIT
1999 Apr 15
2
Philips Semiconductors
Product specification
PNP general purpose
transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER colle...