DTB3055

N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 30 0.025 0.038 7 Single FEATURES TrenchFET® Power MOSFET AEC-Q101 Qualifiedc 100 % Rg and UIS Tested D DTB3055 www.din-tek.jp SOT-223 D S D G G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction) IS Pulsed Drain Currenta IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipationa TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT 30 ± 20 7 4.5 5 31 10 5 4 1.3 - 55 to + 175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. When mounted...